A physics-informed uncertainty-aware surrogate for $p$-$n$ junction diodes

概要

We develop an uncertainty-aware physics-informed surrogate for a one-dimensional $p$-$n$ junction diode, conditioned on device length, doping and bias. Using the internal state of the device as predicted by the surrogate we develop a test-suite of quantities of interest including the terminal current, depletion width, peak field and stored charge. The formalism and the quantities are can be extended to asymmetric junction and two-dimensional diodes as shown by means of benchmark analysis. For the one-dimensional symmetric junction surrogate, we obtain 0.11% median $L_1$ error on the electrostatic potential, and 1.5% and 0.61% on the electron and hole densities. Finally, we develop an uncertainty analysis which determines the validity of surrogate answer within the user-specified tolerance.

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# 論文・記事
A physics-informed uncertainty-aware surrogate for $p$-$n$ junction diodes

# 概要
We develop an uncertainty-aware physics-informed surrogate for a one-dimensional $p$-$n$ junction diode, conditioned on device length, doping and bias. Using the internal state of the device as…

# 原典
https://arxiv.org/abs/2610.39993

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